Aims Accurate simulation of green area index is critical for reliable prediction of crop growth and yield using a crop growth model.
准确模拟绿色面积指数是作物生长模拟模型可靠预测作物生长和产量的关键。
The influence on over etching and under etching to IC layout is analyzed, the computation model and realization method of IC critical area are presented.
论文在分析过刻蚀和欠刻蚀对IC版图影响的基础上，提出了基于工艺偏差影响的IC关键面积计算新模型和实现方法。
Yield of the redundant circuit is analyzed with IC critical area and the computational model of this redundant circuit is given.
利用关键面积的思想分析了冗余电路的成品率，并给出了其计算模型。
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