The result shows that EM information leakage exists in CMOS integrated circuit during work, XOR operation in each round of DES is an attack point.

分析了CMOS逻辑门电路在运行时的电流特征，阐明了集成电路中数据与电磁辐射的相关性，建立了寄存器级电磁信息泄漏汉明距离模型。

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The high-voltage CMOS devices can be used in high-voltage integrated circuit(HV-IC) such as driver ICs for PDP and FED.

高压CMOS器件的研制可为进一步研制FED和PDP平板显示高压驱动电路奠定基础。

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Synthesis tools for several cell level CMOS analog circuits implemented with the above approach have been integrated in FDAADS—FuDan Analog Circuit Automated Design System.

利用上述方法实现的一些CMOS单元电路的自动综合模块已经集成到FDAADS——“复旦模拟电路自动化设计系统”中。

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