It is shown that the measured minority carrier diffusion length increases with the injection level when the latter is high.

结果表明，当注入水平较高时，少子扩散长度的测量值变长。

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Numerical results indicate how the various parameters such as bulk resistivity and carrier diffusion length in the active region affect the profiles.

以数值结果揭示外延层的体电阻率及厚度、活性区载流子的扩散长度、模增益和丝区宽度等参量对上述各种分布的影响。

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The authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers.

本文改进了常规表面光电压测试少子扩散长度法，采用环形下电极消除了薄样品背面光电压信号对测量结果的影响；

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