Silicon plane technique with etching groove and low temperature passivation is proposed to overcome low-breakdown for increasing the finished product rate and reliability of the plane powerful tube.
为提高硅平面大功率管的成品率和可靠性，提出了一种刻蚀槽和低温钝化相结合的克服低击穿的硅平面枝术。
The resulting G-FET devices meet customer requirements for high breakdown voltage, low vertical leakage and high-temperature operation.
将所得的G-FET器件满足客户要求为高击穿电压，低的垂直泄漏和高温操作。
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