bidirectional breakdown diode 双向击穿二极管
delayed breakdown diode 延迟击穿二极管 ; 分析了延迟击穿二极管 ; 延迟击穿
breakdown diode-coupled trigger [计] 击穿二极管耦合触发器
diode breakdown detector 二极管击穿探测仪
diode reverse breakdown voltage 二极管反向击穿电压
diode reverse breakdown 二极管反向击穿
The Source-Measure Unit can also test other diode parameters, including forward voltage drop and breakdown voltage.
源-测量单元还可以测量其它的二极管参数，包括正向电压降和击穿电压。
Measure the reverse breakdown voltage by sourcing a specified re verse current bias, then measuring the voltage drop across the diode.
通过施加规定的反向偏流，然后测量二极管两端的电压，即可测得反向偏置电流。
For maximum exceed noise ratio generated, circuit structure to match the equivalent circuit diagram of the solid-state noise diode in avalanche breakdown state has been designed.
根据固态噪声二极管在雪崩击穿状态的等效电路，设计出与之匹配的电路结构，以实现超噪比的最大输出。
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