... saturated drift field 饱和漂移场 saturated drift velocity 饱和漂移速度 saturated flip-flop 饱和触发器 ...
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该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS 漂移区中的电场分布。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
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