当放置在横向器件的漏极或垂直器件的集电极中时，多晶填充的沟槽有效地放大了漏极或集电极区域，从而降低了导通电阻。
When placed in the drain of a lateral device or in the collector of a vertical device, the poly-filled trench effectively enlarges the drain or collector region, thereby lowering the ON-resistance.
晶体管中发射极和集电极之间的区域。
The region in a transistor between the emitter and the collector.
埋层(7)作为集电极连接区域提供，用于连接集电极接触(6)和集电极区(14)。
A buried layer (7) is provided as a collector connection area which joins the collector contact (6) to a collector area (14).
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