结果发现，多晶硅面注F具有较强的抑制辐射感生阈电压漂移，控制氧化物电荷和界面态生长的能力。

For suppressing the radiation-induced threshold shifts, controlling oxide charges and interface states, fluorine introduction after polysilicon doposition is a better implantation technology.

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亚阈斜率、阈值电压漂移、衬底技术和场氧抗辐射能力已经成为器件按比例缩小给器件带来冲击的最主要的四个方面。

The sub-threshold slope, threshold voltage shift, substrate technique and the anti-radiation ability of field oxides are the four main impacts on the device fabrication in size scaling down.

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