在某一特定的温度处，氧化钒薄膜发生金属-半导体相的转变。
At a critical temperature, vanadium oxide films undergo phase transition between metal phase to semi-conducting phase.
与LCMO单层膜相比，三层薄膜的金属半导体转变温度（TMS）被提高并且强烈依赖于YBCO层的厚度。
In contrast to that for LCMO films, the metal-semiconductor transition temperature (TMS) for LCMO/YBCO/LCMO films is enhanced and strongly depends on the YBCO layer thickness.
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