最后，采用量子限制模型并结合渗流理论解释了实验现象。
The luminescence origin of the film was discussed with a quantum well model in combination with percolation theory.
发现光致发光峰位随多孔度增加而蓝移的数值远小于量子限制模型预期的结果。
The experimental result shows that the PL peak position does not blue shift much as the prediction from the quantum confinement model with the porosity of porous silicon increasing.
多孔硅与硅材料相比，有明显的可见光致发光特性，其原理可用量子限制模型给予解释。
Compared to silicon material, porous silicon has obvious characteristic of visible photoluminescence, and its principle can be explained by quantum confinement model.
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