用C3H6作为碳源气,Ar作为稀释气体和载气,TaCl5为钽源,采用化学气相沉积法(chemical vapor deposition,CVD)在高纯石墨表面制备TaC涂层。采用 .
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目前主要采用化学气相沉积法、离子束溅射法、激光等离子体沉积和激光烧蚀、离子镀、离子注入法等制备方法。
Its structure and character were reviewed, and the synthetic methods, including CVD, ion beam sputtering, laser ablation, ion plating and ion irradiation et al., were completely introduced.
首先采用溶胶-凝胶法制备镍催化剂，在此基础上用化学气相沉积法高产率地制备了碳纳米管。
The catalyst was first produced by sol-gel method and the carbon nanotubes were high yield synthesized by the catalytic chemical vapor decomposition method.
采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。
Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition (HFCVD) on glass at low-temperatures.
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