E>1e3V/cm,这时漂移速度随E的变化偏离线性，迁移率成为E的函数。强场下载流子漂移速度随电场的变化仅仅表现为随电场升高而升高的幅度有所降低，并最终趋于饱和。这种效应称为速度饱和效应。
模型中同时考虑了速度饱和效应、迁移率下降效应和沟道长度调制效应等。
In addition, this model is involved in the velocity saturation effect, mobility degradation effect and channel length modulation effect.
本文首先建立了一个SOI MOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
由于载流子引起的群速度色散效应，使远离饱和区工作的TW-SLA会对有频率啁啾的光脉冲产生展宽或压缩。
The chirped pulses will be compressed or broadened because of carrier-induced group-velocity dispersion when TW-SLA operates far below saturation.
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