结合射频E类功率放大器的结构特点，采用CMOS工艺，达到了在大的输出功率范围内保持持续稳定高效率的目的。
The controller combines parallel amplification and drain modulation of the CMOS class-E power amplifier to provide high efficiency over a broad range of output powers.
真空微电子器件相对于半导体器件来说，有着更高的工作频率和输出功率，正常工作温度范围也相对较大。
Compared with semiconductor devices, vacuum microelectronic devices can work with higher frequency and larger power at a wider range of temperature.
给出了无虚假信号动态范围和输出功率的计算与测试方法。
The estimation and the method of test for the spurious-free dynamic range and maximum power output has been shown.
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