确定了低温下非平衡载流子复合率及扩散速度的降低，是导致SRAM断电后数据残留的主要原因。
The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.
结果表明，和氢溴酸对PANI的质子酸掺杂不同，溴掺杂过程中产生的溴负离子增加了PANI的载流子浓度，形成了电子转移复合物，提高了聚苯胺的电导率。
It is showed that bromine anions and charge transfer complex formed in the doping process enhanced the charge carrier concentration then promote the conductivity of PANI.
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