...键词 MOSFET 半导体器件 衬底电流模型 参数提取 [gap=665]Keywords MOSFET， Semiconductor device， Substrate current model， Parameter extraction ...
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深入研究了热载流子退化过程中栅电流和衬底电流的退化规律，并建立了一个准确的栅电流退化解析模型。
Degradation characteristics of gate current and substrate current during stress are studied, and an accurate analytic degradation model of gate current is presented.
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