研究了STO薄膜金属绝缘体半导体(MIS)结构的介电和界面特性。
The dielectric and interface characteristics of STO with a metal insulator semiconductor (MIS) structure were investigated.
在圆柱形绝缘体上沉积一层金属薄膜制成。
This is made by depositing a thin film of metal on a cylindrical insulating support.
本文简要介绍了电子陶瓷系统中绝缘体、介电质、压电体及铁电薄膜材料及其制备工艺和应用方面的一些新进展。
In this paper, Some of the recent developments in materials, processes and applications for dielectrics, piezoelectrics, and ferroelectric thin...
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