文章还从实验和理论上分析了影响多晶硅薄膜生长速率的因素。
According to the theory and the experiment mentioned in this paper, the factors which effect the growth rate of polysilicon film have been analysed.
随着薄膜生长速率的降低，锡膜由金属转变为半导体，呈现出非金属导电特性。
The specimens deposited at lower rate show some nonmetallic properties. In the present paper, the result as mention above is interpreted from the theory of Anderson localization.
在该模型中，我们考虑了沉积速率、沉积温度以及沉积角度等影响薄膜生长的参数。
By simulation of thin films growth, some microscopic processes can be revealed in extreme condition, such as high temperature and high deposition rate.
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