这一特性使它有可能在新一代微电子设备中发挥重要作用，并为极化输运理论及自旋电子学的研究开辟崭新的领域。
This property makes it possible for them to play a key role in future electronic devices and to offer an interesting field for the study of spin-polarized transport theory and spin electronics.
研究了双磁垒量子结构中，磁场强度和偏压大小对电子自旋极化输运的影响。
The effects of magnetic field and bias voltage on spin polarized electron transport through a dual magnetic barriers quantum structure are investigated in this paper.
自旋电子学器件需要一个有效的自旋注入到传统的半导体中，最近人们比较感兴趣的是利用自旋相关的输运现象-自旋轨道耦合来产生自旋极化。
Of special interest is to produce an uneven spin population out of an unpolarized source by means of various spin-related transport phenomena (relativistic spin-orbit interaction).
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