p-type氧化物的缺陷结构(defect structure)主要为阳离子的空位和 正的孔洞，氧化膜是在气体和氧化物界面生长；而n-type氧化物的缺陷结构主要为阴离子 的空位和电子，其氧化...
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... defective semiconductor || 杂质半导体 defective structure || 缺陷结构 defective to staking || 铆合不良 ...
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The microstructure, defect structure and sintering behaviour were investigated as a function of additive content.
研究了样品的微观结构、缺陷结构和烧结状态随添加剂含量的不同的变化情况。
参考来源 - 添加Mn和Mo对微波介质陶瓷0.24ZnNb·2,447,543篇论文数据，部分数据来源于NoteExpress
光电材料的缺陷结构及其光子学应用。
Defect structures of solid state materials and their photonics applications.
J积分的精确计算是含缺陷结构安全评定的基础。
The precise calculation of J integration is fundamental to safety assessment of structure containing defects.
这类缺陷结构演变与电脉冲输入的电能、热能和应力有关。
The evolution of the above defects is closely associated with the electrical energy, thermal energy and the stress introduced by the electropulsing.
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