在给定晶体管中的第一栅极导体和第二栅极导体的相对尺寸控制晶体管的阈值电压。
The relative sizes of the first and second gate conductors in a given transistor control the threshold voltage for the transistor.
以及一电压提升装置，用以控制该第一MOS晶体管及该第二MOS晶体管的栅极；
The voltage lifting device controls grid electrodes of the first MOS transistor and the second MOS transistor.
该耗尽模式部分由该第二栅极栅控，并且适于工作于耗尽模式且可屏蔽该第一栅极免受电压负荷影响。
The depletion mode portion is gated by the second gate, and has been modified to operate in depletion mode and that is operative to shield the first gate from voltage stress.
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