考察了离子束流密度和基底温度对薄膜性能的影响。
The effect of ion beam flux density and the temperature of Si substrate on the properties of the film was investigated.
采用五栅网离子能量测量装置和法拉第筒测量了宽束冷阴极离子源的离子能量和离子束流密度。
The ion energy and the density of beam flux of cold cathode ion source were measured by pentagrid probing and Faraday cup.
溅射特性研究结果表明：屏极电压和溅射气压对离子束均匀性和束流密度影响显著；
The results about the research on the characters of ion beam sputtering show that grid voltage and sputtering gas pressure have great influences on ion beam distribution and current.
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