分析和探讨了各相介质对碳化硅材料的腐蚀机理以及腐蚀产物的相组成。
The corrosive mechanism of different medium on silicon carbide materials and the phases constitute of corrosively formed materials were analyzed.
在铝电解方面，氮化硅结合碳化硅远较阴极碳块耐腐蚀、抗氧化、电阻率高，是理想的电解槽侧壁内衬材料。
Compared with carbon, silicon nitride bonded silicon carbide has better oxidation resistance and bigger resistance ratio, which make it be a perfect line material of al electrolysis cell.
论文得到了用腐蚀法表征碳化硅材料缺陷的方法和优化的工艺参数。
Characterization method of defects in silicon carbide by chemical etching and optimal process parameters are obtained.
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