关键词 腐蚀坑； 碲锌镉； 碲镉汞红外焦平面； 缺陷,[gap=1091]Key words Etch pit, CdZnTe, MCT IRFPA, Defects,
基于6个网页-相关网页
窄禁带半导体碲镉汞红外焦平面列阵研究是当代红外光电子技术的前沿。
The study of the infrared focal plane array based on the narrow gap semiconductors HgCdTe is a hot topic in the field of advanced infrared optoelectronics.
针对长线列碲镉汞红外焦平面探测器封装的特点，文章讨论了分置式微型杜瓦研制的难点。
According to package characteristics of long linear HgCdTe IRFPA detector, difficulties of the metal split micro dewar manufacture are discussed in the paper.
本文介绍了中科院“九五”基础性研究重大项目“碲镉汞红外焦平面光电子物理的应用基础研究”的进展情况。
This paper reports the progress of the project: fundamental research for application of the physics of optoelectronics on HgCdTe infrared focal plane array.
应用推荐