本文对这些氧化物薄膜硅衬底的相互作用也进行了讨论。
The interaction between oxide films and silicon substrates is discussed.
通过对XPS图的分析得到硅氧的原子比大约是1：1，这个结果表明对薄膜进行退火后氧化硅薄膜是富硅氧化物。
Analysis by XPS graph obtained silicon atom ratio of oxygen is about 1:1, the results showed that the films were annealed silicon oxide film is rich silicon oxide.
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