研究结果表明这种慢波结构相对原结构在微波输出功率和转换效率上都有很大提高，微波工作频率与预测相符合。
The result indicates that the slow wave structure significantly improves the microwave output power and conversion efficiency. The simulated microwave frequency agrees well with the predicted value.
真空微电子器件相对于半导体器件来说，有着更高的工作频率和输出功率，正常工作温度范围也相对较大。
Compared with semiconductor devices, vacuum microelectronic devices can work with higher frequency and larger power at a wider range of temperature.
论文对气体击穿现象进行了理论分析，最终确定出与微波输出功率相对应的最佳工作真空度，避免气体击穿现象的发生。
In this paper this phenomenon is analyzed theoretically, and finally the best vacuum degree in correspondence with different microwave power is found out to avoid this phenomenon.
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