在基于磁性隧道结(Magnetic Tunneling Junction,MTJ)的磁随机存储器(Magnetoresistantive Random Access Memory,MRAM)中利用通过MTJ的垂直电流,实现信息写入的新方法,同时给出了基于此新方法的一种新的MRAM结构和驱动...
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介绍了巨磁电阻材料在高密度读出磁头、磁传感器、磁性随机存储器等领域的应用。
This paper introduced the giant magnetoresistance materials and their applications to magnetoresistance sensors, read head for high density magnetic recording and magnetic random access memory.
介绍了巨磁电阻(GMR)及隧道磁电阻(TMR)效应，讨论了计算机磁随机存储器(MRAM)的最新应用开发。
This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.
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