采用简单的洒落法构建了基于单根单壁碳纳米管束的场效应晶体管(field effect transistors,FETs)器件,并成功地测试了其电学性能。
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本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
The present invention relates to one kind of FET with vertical channel structure and its preparation process.
本发明提供一种以碳纳米管为电极的场效应晶体管器件及其制备方法。
The invention provides a field effect transistor device using a carbon nano tube as an electrode and a preparation method thereof.
本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
The present invention relates to one kind of FET with polysilicon source and vertical channel structure and its preparation process.
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