得到了各种反磁化机制过渡的临界尺寸。
The critical diameters of different reversal mechanism are obtained.
采用本发明可保持线宽的临界尺寸，和产品的优良率可获得改进。
The adoption of said invented method can retain the critical size of line width, and can improve its product quality.
一种在半导体与罩幕制造中改善晶圆上的图案化特征结构的临界尺寸均匀性的方法。
A method for improving the critical dimension uniformity of a patterned feature on a wafer in semiconductor and mask fabrication is provided.
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