为了研究MOS结构的电子辐照效应，采取了能量为0。
For the sake of researching of radiation effect of MOS structure irradiated by electron, we adopted 0.
结合太阳电池理论和半导体材料的电子辐照效应给出了合理的解释。
This result has been explained properly by combined with theories of solar cell and electron irradiation effect of semiconductor.
因此在这个电子通量范围内，采用加速地面试验来模拟空间的电子辐照效应是有效的。
Accordingly, in this range the accelerated ground-based testing to simulate electron exposure effects of space is validated.
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