最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。
Finally, the static and transient variation of electron drift velocity in high electric fields are studied.
最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.
计算了不同E/N条件下电子在氮气中的漂移速度，结果与实验数据符合得很好。
The electron drift velocity as a function of E/N is given, which is in good agreement with experimental result.
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