但由于与噪声电压的大小，网络频率特性及噪声源功率谱形式有关，故测量准确度较低。
Because it is related to the magnitude of noise RMS voltage, the frequency characteristic of circuit and the power spectrum of noise source, the accuracy of measurement is quite low.
模拟分析表明 ，采用该结构 ，器件的雪崩击穿电压能提高到理想平行平面结的 90 %以上 ，器件的大电流特性和频率特性也有所改进 。
The simulation analysis indicates that with this structure the avalanche breakdown voltage of RF power transistors can be increased to be over 90% of that for an ideal parallel .
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