本文介绍一种高可靠的具有自动过流保护的智能高压大功率VDMOSFET，已研制出了漏源击穿电压大于200V；
A high reliability smart power VDMOSFET of high voltage with over current protection by oneself is descrital in the peper.
源表首先进行必要的直流测试，例如正向偏压、反向击穿电压和漏流。
The SourceMeter instrument first performs the necessary DC tests, such as forward voltage, reverse breakdown voltage, and leakage current.
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