源表首先进行必要的直流测试，例如正向偏压、反向击穿电压和漏流。
The SourceMeter instrument first performs the necessary DC tests, such as forward voltage, reverse breakdown voltage, and leakage current.
本文介绍一种高可靠的具有自动过流保护的智能高压大功率VDMOSFET，已研制出了漏源击穿电压大于200V；
A high reliability smart power VDMOSFET of high voltage with over current protection by oneself is descrital in the peper.
经过这样处理后的器件，漏极射频电流损失小，器件击穿电压和输出功率得以提高。
The device treated by the process is of small loss of drain radio-frequency current and increased electric breakdown strength of device as well as delivered power.
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