在所有描述半导体的数学模型中，流体动力学模型和漂移扩散模型是应用最广泛的模型。
The hydrodynamic and the drift-diffusion models are the most widely used models to describe semiconductor devices today.
使用泊松方程、漂移扩散模型和N—S方程对介质阻隔面放电等离子体控制边界层流动进行了一体化数值模拟。
The boundary layer flow control using dielectric barrier surface discharge plasma is simulated using Poisson's equation, drift-diffusion model and N-S equations.
提出一种基于半导体器件漂移扩散模型并结合交替方向隐式时域有限差分(AD I - FDTD)法的新型全域FDTD法。
A novel global FDTD scheme based on a drift-diffuse model of semiconductor combined alternating direction implicit finite-difference time-domain (ADI-FDTD) method is presented in this paper.
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