计算结果表明，发射区载流子寿命的变化几乎不影响注入到基区的电子电流，但却成反比例地影响基区空穴电流。
The calculated results show that the electron current injected into the base region is not affected, but an increase of the base hole current is increased with the lifetime reduction.
其中，第一个晶粒间界能够最有效地减少注入饱和少数载流子电流。
The injecting saturate minority carrier current may be reduced the most effectively by the first grain boundary.
本文提出了一种新的多晶硅发射区少数载流子注入理论。
A new theory about minority carrier injection into polysilicon emitter has been proposed in this paper.
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