德国企业AZZURRO拥有独家专利氮化镓上矽（GaN-on-Si）的技术，制作方式是先在矽基板上长出以GaN材料为基础的缓冲层(buffer layer)，然后可再依LED或功率半导体等产业的不同应用，于此...
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目前LED同硅晶片的制作设备类似，都是通过在蓝宝石衬底片上沉淀氮化镓层实现。
At present these LEDs are made in machines similar to those used to make silicon chips, by depositing layers of gallium nitride on sapphire-based wafers.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
本发明公开了一种在硅衬底上生长氮化镓薄膜的方法，包括如下步骤：选择硅衬底；
The invention discloses a method for growing a gallium nitride membrane on a silicon substrate, which comprises the following steps: selecting the silicon substrate;
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