The oxygen vacancies in undoped TiO2 ceramics segregate at grain boundaries. With increasing the sintering temperature,the oxygen vacancy concentration of both grains and grain boundaries increase.
不掺杂TiO2陶瓷的氧空位在晶界出现偏析行为,并随烧结温度的增加,晶粒中的氧空位浓度和晶界氧空位浓度均随之增加。
参考来源 - 不掺杂TiO·2,447,543篇论文数据，部分数据来源于NoteExpress
绿峰强度的不同取决于其结构中不同浓度的单离子氧空位。
The difference in green emission intensity results from the different level of oxygen vacancies in ZnO structures.
这应部分地与固体化学所描述的Y3 +掺杂所造成固定、额外并且是高浓度的氧空位有关。
This might partly be relative with the fixed, extra and highly concentrated oxygen vacancies resulted from Y3 + doping, the mechanics of which were as described in the solid state chemistry.
氧化物磁性半导体薄膜的电输 运性质只与材料中氧空位的浓度相关。
Electric transport property of oxide magnetic semiconductor film is only related to concentration of oxygen vacancy in material.
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