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在某一特定的温度处，氧化钒薄膜发生金属-半导体相的转变。
At a critical temperature, vanadium oxide films undergo phase transition between metal phase to semi-conducting phase.
本文以高纯金属钒作为靶材，采用磁控溅射工艺制备氧化钒薄膜。
In this paper, several thin films samples of vanadium oxide were got by high-frequency Magnetron sputter with pure metal vanadium as sputter source.
掺杂能明显改变二氧化钒薄膜的相变温度，影响其电学和光学性质。
Phase transition temperature (Tc) of VO2 thin films was changed obviously by doping methods and then the electrical and optical properties were influenced.
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