研究了经氢等离子体处理后多壁碳纳米管的场发射性能。
Electronic field emission from hydrogen plasma processed (HPP) multiwall carbon nanotubes (MWNT) films have been investigated.
先沉积氮化硅薄膜再氢等离子体处理能得到更好的钝化效果。
Depositing SiNx thin film followed by hydrogen plasma treatment will result in better passivation effect.
根据这种方法，我们研究了氢等离子体处理对多晶硅薄膜晶体管禁带态密度的影响。
With this method, the influences of the plasma hydrogenation on the gap state density have been investigated.
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