...流平台 结构：纵向双极晶体管（CMOS Vertical Bipolar Transistor，CVBT），横向双极晶体管（CMOS Lateral Bipolar Transistor，CLBT）。CVBT的主要缺点在于集电极和芯片衬底短接，限制了它的应用范围。
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本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。
A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.
本文提出空穴注入控制型横向绝缘栅双极晶体管(CI LIGBT)，可有效控制高压下阳极区空穴注入，提高器件的抗闩锁性能。
Controlled hole injection LIGBT (CI LIGBT) is proposed in the paper, which can effectively control the hole injection with high anode voltage, and its latch up free characteristics can be improved.
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