...器件主要有GTO(门极可关断 晶闸管，Gate Turn-off Thyristor)，IGBT(绝缘门极双极性晶体管，Insulated Gate Bipolar Transistor)，IGCT(集成门极换向晶闸管，Integrated Gate Commutated Thyrist..
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...field effect transistor，MOSFET）、双极性晶体管、二极管、绝缘栅极双极性晶体管（insulated gate bipolar transistor，IGBT）、可控硅整流器（silicon—controlled rectifier，SCR）、MOS控制型晶闸...
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介绍了绝缘门极双极性晶体管（IGBT）的基本结构、工作原理、开关特性，以及在焊接逆变器中的应用。
The paper introduces the basic structure, working principle and switching feature of IGBT and its application to the converter used for welding.
讨论了采用级联双极性晶体管结构的超宽带极脉冲发生器，并对其电路及双极性晶体管雪崩的工作原理进行了具体分析。
The paper analyses the electric circuit and the working principle of the avalanche of the bipolar transistor of the pulser with a cascade connected bipolar transistor structure.
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
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