另外，当有源硅区之间的隔离必须充当一离子注入步骤的一自行对准阻挡层时，所述多晶硅瓦片本身增加所述隔离的厚度。
In addition, the poly tiles themselves increase the thickness of the isolation between active silicon regions when it must serve as a self-aligned blocking layer for an ion implantation step.
为了提高脊波导结构的超辐射二极管（SLD）与单模光纤的耦合功率，研究了有源区与脊之间的残留层和上光限制层的厚度对SLD输出功率和近场光斑的影响。
With the aim of achieving high coupling power of RWG SLDs into SMFs, the structure dependences of the output power and the near field pattern are investigated.
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