晶化程度随退火温度升高。
The extent of crystallization increased with the annealing temperature.
随着硅烷浓度的降低或衬底温度的升高，薄膜晶化程度增加。
The crystallinity of the deposited films was enhanced by decreases of silane concentration or increases of the substrate temperature.
研究结果表明，随着合金成分的不同，非晶化程度的影响不同。
The results showed that with the different Ni concentration, the effect of degree of amorphization was different.
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