本文在分析了IGBT（绝缘栅双极晶体管）特性的基础上，设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
提出了为清晰、稳定地获得高频下晶体管特性曲线、S参量以及具有晶体管个性的特征频率匹配参数的一种独特的新方法。
A unique new method is advanced for obtaining the transistor characteristic curves clearly and stably, s parameters and the frequency matching parameters with the transistor individuality.
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