根据这种方法，我们研究了氢等离子体处理对多晶硅薄膜晶体管禁带态密度的影响。

With this method, the influences of the plasma hydrogenation on the gap state density have been investigated.

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也就是说，这种趋势就是通过提高晶体管的密度使芯片更小，并消耗更少的电能，也就意味着可以将手机做得更小，电池续航时间更长。

That is, the tendency is to use the increased density to make the same chip smaller and consume less power, to make phones smaller and make batteries last longer.

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实验结果表明，该技术能够有效降低多晶硅薄膜的界面态密度，提高多晶硅薄膜晶体管性能。

The interface state density of poly-Si thin film was reduced and the properties of poly-Si thin film transistors were improved using this technique.

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