在微波双极型晶体管中，收集区的厚度是影响其截止频率的一个重要因素。

The thickness of collector is one of the factors that limit cut-off frequency in microwave bipolar transistors.

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水平沟道场控晶闸管是由结型场效应晶体管和双极型晶体管复合构成的一种晶闸管。

Lateral channel field-controlled thyristor is a combination of a NJFET and a PNP bipolar transistor.

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绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。

Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.

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