提出一种计算掺杂半导体中孤立杂质能级的方法，该方法建立在密度函数理论基础之上。
Basing on the density-functional theory, the paper presents a method of calculating the isolated impurity levels in doped semiconductors.
首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究。
The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
在相同泵浦条件下，钕离子掺杂质量分数为0 5%的掺钕钒酸钇晶体中截面处的温升大于其他掺杂质量分数的晶体的相应温升。
With the same pump conditions, the medial section temperature raise of 0.5%(mass fraction) Nd-ion doped neodymium-doped yttrium orthovanadate crystal is higher than other doped quality index.
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