随着MOS器件尺寸逐渐减小，由热载流子效应导致的损伤变得越来越严重，已成为影响器件性能的主要失效机制之一。

With the decrease of the MOS devices size, hot carrier effect failure get more and more heavy, it become one of the main failure mechanisms.

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针对以缺陷密度为参量的细观损伤演化模型的局限性，着重研究了微裂纹尺寸对损伤演化的影响。

The effect of the microcracks size on damage evolution was investigated to overcome the limitations of damage models based only on defect density.

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