首次采用多晶硅发射区RCA技术制备出微波功率晶体管。
A polysilicon emitter RCA microwave transistor was fabricated to fit the power application for the first time.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
本设计的目的是建立一个用于宽带固态放大器的宽带微波功率晶体管。
The objective of this design is to a broadband microwave power transistor used in broadband solid state amplifier.
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