第 一电极电耦接到半导体层，第二电极在邻近沟槽的底部的位置处电耦接到基 区。
The first electrode is electrically coupled to the semiconductor layer and the second electrode is electrically coupled to the base region, at a location adjacent a bottom of the trench.
一隔离结构位于沟槽式栅极的底部并与沟槽式栅极绝缘，从而对沟槽式栅极与肖特基二极管两者提供屏蔽效应。
A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.
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